NCV5183DR2G

The NCV5183DR2G is a high voltage, high current power MOSFET driver from onsemi, capable of directly driving two N-channel power MOSFETs in a half-bridge configuration. It utilizes bootstrap techniques to ensure proper drive of the high-side power switch and operates with two independent inputs, accommodating various topologies like half-bridge, asymmetrical half-bridge, active clamp, and full-bridge converters.

Key electrical specifications include a voltage range up to 600V, dV/dt immunity of ±50 V/ns, and a gate drive supply range from 9V to 18V. The device offers an output source/sink current capability of 4.3A and is compatible with 3.3V and 5V logic inputs. It also features an extended allowable negative bridge pin voltage swing to –10V and matched propagation delays between channels, typically 120 ns.

This driver is suitable for applications such as power supplies for telecom and datacom, half-bridge and full-bridge converters, push-pull converters, high voltage synchronous-buck converters, motor controls, electric power steering, and Class-D audio amplifiers. The NCV5183DR2G is supplied in a Pb-free SOIC-8 package, with standard packaging on tape and reel for 2500 units.