| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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30,000 pcs
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30000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The ON Semiconductor NCV51190MNTAG is a high-speed linear regulator specifically designed to generate the VTT termination voltage rail required for DDR-I, DDR-II, and DDR-III memory modules. This device is capable of actively sourcing or sinking significant current, up to ±1.5 A for DDR-I and ±0.5 A for DDR-II/III, while maintaining tight output voltage regulation within ±30 mV.
Key features include integrated power MOSFETs with thermal protection, ultra-fast response to line and load transients, and minimal external component count. The regulator supports a Suspend To RAM (STR) function for power saving during standby modes. It is supplied in a compact 8-DFN (2x2) surface-mount package, making it suitable for space-constrained applications.
This regulator is ideal for applications such as desktop PCs, notebooks, workstations, graphics cards, set-top boxes, digital TVs, and embedded systems that utilize DDR memory. Its cost-effectiveness and robust design ensure reliable termination voltage generation for high-speed memory interfaces.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.75 | $0.75 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The NCV51190MNTAG supports up to ±1.5 A for DDR-I and up to ±0.5 A for DDR-II/III.
The output voltage is regulated to within ±30 mV.
The operating temperature range is from -40°C to 125°C.
The NCV51190MNTAG is available in an 8-DFN (2x2) package.
Yes, the NCV51190MNTAG features a power-saving Suspend To RAM (STR) function.