| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
25,000 pcs
|
25000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
5,938 pcs
|
5938 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request | |
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Channel Type | |
| Driven Configuration | |
| Gate Type | |
| High Side Voltage | |
| Input Type | |
| Logic Voltage | |
| Mounting Type | |
| Number of Drivers | |
| Operating Temperature | |
| Rise | |
| Supplier Device Package | |
| Voltage |
The ON Semiconductor NCP5901DR2G is a dual-channel synchronous gate driver IC specifically designed for half-bridge applications. It supports N-channel MOSFETs and operates with a supply voltage range of 4.5V to 13.2V, featuring a high side voltage capability of up to 35V.
This driver IC offers non-inverting input and synchronous channel types, with logic voltages of 1V and 2V. It provides fast switching characteristics with rise times of 11ns and 16ns. The device is rated for an operating temperature range of -40°C to 150°C (TJ).
The NCP5901DR2G is supplied in an 8-SOIC package, suitable for surface mount applications. Its design is optimized for driving MOSFETs in power conversion circuits, contributing to efficient and reliable operation.
Compliance information indicates RoHS3 compliance, MSL 1, and REACH unaffected status, though these are based on available database information and may require verification.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.01 | $2.01 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
4.5V to 13.2V.
8-SOIC (3.90mm width).
-40°C to 150°C.
2 channels.
N-Channel MOSFETs.
Half-bridge.
35V.