| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
6,000 pcs
|
6000 pcs | On Request | 1 | On Request | On Request | 1008+ | On Request | On Request | |
|
116 pcs
|
116 pcs | On Request | 1 | On Request | On Request | 12+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Channel Type | |
| Driven Configuration | |
| Gate Type | |
| High Side Voltage | |
| Input Type | |
| Logic Voltage | |
| Mounting Type | |
| Number of Drivers | |
| Operating Temperature | |
| Rise | |
| Supplier Device Package | |
| Voltage |
The NCP5359DR2G from ON Semiconductor is a dual-channel, half-bridge gate driver suitable for driving N-channel MOSFETs. This device operates with a supply voltage range of 10V to 13.2V and features a high side voltage capability of up to 35V.
Designed for surface mount applications, the NCP5359DR2G comes in an 8-SOIC package. It offers a logic voltage range of 1V to 2V and a synchronous channel type. The driver provides non-inverting input and includes specifications for rise times of 11ns and 16ns.
With an operating temperature range of -40°C to 150°C (TJ), this gate driver is suitable for various industrial applications requiring efficient power management. Its half-bridge configuration makes it ideal for use in power supply circuits and motor control systems.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.01 | $2.01 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
-40°C to 150°C (TJ)
8-SOIC (0.154", 3.90mm Width)
10V ~ 13.2V
2
35 V