| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,000 pcs
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1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The ON Semiconductor NCP5183DR2G is a high voltage, high current power MOSFET driver. It provides two outputs for direct drive of two N-channel power MOSFETs in a half-bridge configuration, utilizing bootstrap techniques for high-side switch drive.
This driver supports a voltage range up to 600V and offers a dV/dt immunity of ±50 V/ns. The gate drive supply range is from 9V to 18V, with output source and sink current capabilities of 4.3A each. It is compatible with 3.3V and 5V input logic and features matched propagation delays between channels, typically 120 ns. Under-voltage lockout (UVLO) is included for both channels.
The NCP5183DR2G is housed in an 8-SOIC package suitable for surface mounting. Its typical operating temperature range is -40°C to 125°C (TJ). This device is pin-to-pin compatible with industry standards and is Pb-free.
Typical applications include power supplies for telecom and datacom, half-bridge and full-bridge converters, push-pull converters, high voltage synchronous-buck converters, motor controls, electric power steering, and Class-D audio amplifiers.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.01 | $2.01 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The operating voltage range is 9V to 18V.
The driver provides 4.3A source and 4.3A sink current.
Typical propagation delay is 120ns.
The maximum high-side voltage is 600V.
The junction temperature range is -40°C to 125°C.
It is available in an 8-SOIC surface mount package.
It is designed for N-Channel MOSFETs.