NCP51820AMNTWG

The NCP51820AMNTWG from ON Semiconductor is a high-speed gate driver specifically engineered for driving enhancement-mode, HEMT, and GIT Gallium Nitride (GaN) power switches. It is suitable for off-line, half-bridge power topologies.

This device features short and matched propagation delays, advanced level shift technology, and a wide common-mode voltage range for both high-side (-3.5 V to +650 V typical) and low-side (-3.5 V to +3.5 V typical) drives. It provides stable dV/dt operation up to 200 V/ns for both driver output stages, crucial for high-speed switching applications.

Protection features include independent under-voltage lockout (UVLO) for VDD, VDDH, and VDDL bias voltages, as well as thermal shutdown based on die junction temperature. Programmable dead-time control is available to prevent cross-conduction. The split output allows for independent turn-on/turn-off adjustment.

The NCP51820AMNTWG is housed in a 15-QFN (4x4) package, suitable for surface mounting. It operates within a voltage range of 9V to 17V and offers a source capability of 1A and a sink capability of 2A. Its rise and fall times are optimized for GaN devices, with typical values of 1.5 ns and 2 ns respectively. The operating temperature range is up to 150°C (TJ).