| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
29,050 pcs
|
29050 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
4,477 pcs
|
4477 pcs | On Request | 1 | On Request | On Request | 09+ | On Request | On Request | |
|
930 pcs
|
930 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| High Side Voltage | |
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The NCP5181PG from ON Semiconductor is a high voltage power MOSFET driver capable of driving two N-channel power MOSFETs in a half-bridge configuration. It utilizes bootstrap techniques to ensure proper drive of the high-side power switch. The driver operates with two independent inputs, accommodating various topologies including half-bridge, asymmetrical half-bridge, active clamp, and full-bridge converters.
Key electrical specifications include a high voltage range up to 600V, dV/dt immunity of ±50 V/nsec, and a gate drive supply range from 10V to 20V. The output current capability is 1.4A for source and 2.2A for sink. It is compatible with 3.3V and 5V logic inputs and features matched propagation delays between channels.
This device is housed in an 8-PDIP package with a through-hole mounting type. It is suitable for applications such as high power energy management, half-bridge power converters, and bridge inverters for UPS systems. The operating temperature range is -40°C to 150°C (TJ).
| Qty | Low | High |
|---|---|---|
| 1+ | $2.01 | $2.01 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The gate drive supply range is 10V to 20V.
The NCP5181PG is available in an 8-DIP (0.300", 7.62mm) through-hole package.
-40°C to 150°C (junction temperature).
1.4A source and 2.2A sink.
Up to 600V.
Yes, it is compatible with 3.3V and 5V input logic.
Yes, UVLO is provided for both channels.