| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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114,000 pcs
|
114000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
3,667 pcs
|
3667 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
3,500 pcs
|
3500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The ON Semiconductor NCP51705MNTXG is a high-speed, low-side gate driver specifically designed to drive SiC MOSFET transistors. It delivers a high peak output current of 6A for both source and sink capabilities, minimizing switching losses. The driver supports an extended positive voltage rating for efficient SiC MOSFET operation during conduction and features a user-adjustable negative charge pump for fast turn-off and robust dV/dt immunity.
This device operates within a voltage range of 10V to 22V and logic voltages of 1.2V or 1.6V. It includes protection functions such as under-voltage lockout and thermal shutdown. The NCP51705MNTXG is housed in a compact 24-QFN (4x4) package with an exposed pad, suitable for surface mounting. Its operating temperature range is -40°C to 125°C (TA).
Typical applications include driving SiC MOSFETs in industrial inverters, motor drivers, and power factor correction (PFC) circuits, as well as AC-to-DC and DC-to-DC converters. The accessible 5V reference/bias rail is useful for powering digital isolators in isolated gate drive applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.01 | $2.01 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
10 V to 22 V.
24-VFQFN Exposed Pad (24-QFN 4x4 mm).
-40°C to 125°C (TA).
6 A source and 6 A sink.
SiC MOSFET.
1 (single channel).
Inverting and non-inverting.