| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,000 pcs
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2000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The NCP51561DBDWR2G is a high-performance isolated dual channel gate driver manufactured by On Semiconductor. It is designed to drive power MOSFETs and SiC MOSFET switches in various power conversion and motor drive applications. The device provides two independent channels with galvanic isolation of 5 kV RMS, allowing a working voltage of up to 1500 V DC. It supports output supply voltages from 6.5 V to 30 V and features programmable dead time, under-voltage lockout protections, and matched propagation delays for precise switching. The package is a 16-SOIC surface-mount type, suitable for compact designs. Its key electrical characteristics include peak source current of 4.5A, peak sink current of 9A, and a typical propagation delay of 36 ns. It is certified for RoHS3 compliance, REACH unaffected, and has a moisture sensitivity level of 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.62 | $2.62 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The device supports output supply voltages from 6.5 V to 30 V.
It comes in a 16-SOIC surface-mount package.
Yes, it is RoHS3 compliant.
The typical propagation delay is 36 nanoseconds.