NCP51561DADWR2G

The NCP51561DADWR2G is a high-performance isolated dual-channel gate driver manufactured by onsemi. This device is engineered for rapid switching applications, making it suitable for driving power MOSFETs and SiC MOSFET power switches. It boasts a 4.5A peak source current and a 9A peak sink output current, ensuring robust performance in demanding power management circuits.

Key features include a typical propagation delay of 36ns with excellent delay matching and pulse-width distortion characteristics. The driver offers 5 kVrms internal galvanic isolation and supports a working voltage of up to 1500 VDC, providing enhanced safety and reliability. It can be configured for dual low-side, dual high-side, or half-bridge gate driving, offering flexibility for various power supply designs. The NCP51561DADWR2G also incorporates independent under-voltage lockout (UVLO) protections for both gate drivers and a programmable dead-time adjustment function. It is supplied in a 16-SOIC surface mount package and operates across a wide temperature range of -40°C to 125°C.

Typical applications for this gate driver include motor drives, isolated converters in DC-DC and AC-DC power supplies, server, telecom, and industrial infrastructures, as well as UPS and solar inverters. Its high common mode transient immunity (CMTI > 200 V/ns) ensures stable operation in noisy environments.