| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,000 pcs
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1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
905 pcs
|
905 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The NCP51560BBDWR2G from onsemi is an isolated dual-channel gate driver, engineered for high-speed switching to control power MOSFETs and SiC MOSFET power switches. It offers short and matched propagation delays, with a typical delay of 38 ns and a maximum delay matching of 5 ns per channel. The device provides 5 kVrms internal galvanic isolation from input to each output, supporting a working voltage up to 1500 VDC. It can be configured as dual low-side, dual high-side, or a half-bridge driver with programmable dead time.
Key protection features include independent under-voltage lockout (UVLO) for both gate drivers and a Dead Time adjustment function. The gate driver operates with a supply voltage range of 9.5V to 30V and has a common mode transient immunity (CMTI) greater than 200 V/ns. It is housed in a 16-SOIC package and is suitable for surface mount applications, operating across a temperature range of -40°C to 125°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.62 | $2.62 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The NCP51560BBDWR2G operates within a temperature range of -40°C to 125°C.
The NCP51560BBDWR2G is available in a 16-SOIC (0.295", 7.50mm Width) package.
The supply voltage for the NCP51560BBDWR2G ranges from 9.5V to 30V.
The NCP51560BBDWR2G has an isolation voltage of 5 kVrms.
The typical propagation delay for the NCP51560BBDWR2G is 38 ns.
The reinforced isolation voltage for this gate driver is 8000 VPK.