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NCP51560ABDWR2G The NCP51560ABDWR2G is an isolated dual-channel gate driver from On Semiconductor. It features 5 kVrms galvanic isolation, 4.5A source, 9A sink peak current, and a typical propagation delay of 38 ns. Designed for driving power MOSFETs and SiC MOSFETs, it supports various configurations including low-side, high-side, and half-bridge applications. The device is packaged in a 16-SOIC surface-mount package.
Mfr Part #:

NCP51560ABDWR2G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The NCP51560ABDWR2G is an isolated dual-channel gate driver from On Semiconductor. It features 5 kVrms galvanic isolation, 4.5A source, 9A sink peak current, and a typical propagation delay of 38 ns. Designed for driving power MOSFETs and SiC MOSFETs, it supports various configurations including low-side, high-side, and half-bridge applications. The device is packaged in a 16-SOIC surface-mount package.
✓ Total Stock: 3,982 pcs
$ Price Range: $2.62

NCP51560ABDWR2G Available from 1 distributor

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✓ Non-Authorised
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3,982 pcs
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NCP51560ABDWR2G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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Manufacturer Name
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Current
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Mounting Type
Number of Channels
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Propagation Delay
Propagation Delay tpLH
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NCP51560ABDWR2G Description

Short technical summary and product information.

The NCP51560ABDWR2G is an isolated dual-channel gate driver manufactured by On Semiconductor. It provides two independent channels with galvanic isolation of 5 kVrms, suitable for high-voltage applications up to 1500 VDC. The device offers peak source and sink currents of 4.5A and 9A respectively, making it capable of fast switching of power MOSFETs and SiC MOSFETs. Its propagation delay is typically 38 ns with a maximum delay matching of 5 ns and pulse-width distortion of 5 ns, ensuring synchronized switching in complex circuits. The device includes features such as independent under-voltage lockout protections, user-programmable dead time, and an enable/disable pin that shuts down both outputs simultaneously. It supports supply voltages from 6.5V to 30V, with specific UVLO thresholds for different device types. The package is a surface-mount 16-SOIC, suitable for compact and high-density designs. Applications include motor drives, isolated DC-DC and AC-DC power supplies, and industrial control systems.

NCP51560ABDWR2G Quick Information

Product Type: Gate Driver
Canonical Name: NCP51560ABDWR2G

NCP51560ABDWR2G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NCP51560ABDWR2G Estimated Pricing

Qty Low High
1+ $2.62 $2.62

Estimated market price range - modelled values for guidance only, not live distributor offers.

NCP51560ABDWR2G Features

  • High galvanic isolation of 5 kVrms
  • Peak source current of 4.5A
  • Peak sink current of 9A
  • Supports supply voltage 6.5V to 30V
  • Typical propagation delay of 38 ns

NCP51560ABDWR2G Applications

  • Motor drive applications
  • Isolated power converters
  • Industrial control systems
  • High-voltage switching circuits

NCP51560ABDWR2G FAQs

5 frequently asked questions generated from this part’s specifications.
What is the isolation voltage of the NCP51560ABDWR2G?

The NCP51560ABDWR2G provides 5 kVrms galvanic isolation.

What is the typical propagation delay of this device?

The typical propagation delay is 38 nanoseconds.

What package type is used for the NCP51560ABDWR2G?

It is packaged in a 16-SOIC surface-mount package.

Is the NCP51560ABDWR2G RoHS compliant?

Yes, it is RoHS3 compliant.

What are the peak source and sink currents?

The peak source current is 4.5A and the peak sink current is 9A.

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