| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
35,000 pcs
|
35000 pcs | On Request | 1 | On Request | On Request | 1823+ | On Request | On Request | |
|
7,500 pcs
|
7500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Halogen Free | |
| High Side Voltage | |
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| Logic Voltage | |
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The NCP5109ADR2G from ON Semiconductor is a versatile high voltage gate driver IC. It provides two outputs for direct drive of N-channel power MOSFETs or IGBTs, suitable for half-bridge configurations. The device utilizes bootstrap techniques for efficient high-side power switch driving.
Key electrical specifications include a high voltage range of up to 200V, dV/dt immunity of ±50 V/nsec, and output source/sink current capabilities of 250 mA / 500 mA. It is compatible with 3.3V and 5V logic inputs and offers matched propagation delays between channels. The driver includes cross-conduction protection with a 100 ns internal fixed dead time for version B and under-voltage lockout (UVLO) for both channels.
This gate driver is available in a standard 8-SOIC package, designed for surface mount applications. Its operating temperature range is -40°C to 125°C (TJ). Typical applications include half-bridge power converters, complementary drive converters, and full-bridge converters.
Features like independent logic inputs accommodate various topologies, while the extended allowable negative bridge pin voltage swing to -10V aids signal propagation. The NCP5109ADR2G is pin-to-pin compatible with industry standards.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.01 | $2.01 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The high voltage range is up to 200 V.
The operating temperature range is -40°C to 125°C (TJ).
It is available in an 8-SOIC package.
The RoHS status is RoHS3 Compliant.
The output source current capability is 250 mA and the sink current capability is 500 mA.
The gate drive supply range is from 10 V to 20 V.
Yes, Version B includes 100 ns internal fixed dead time for cross-conduction protection.