| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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8,000 pcs
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8000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The ON Semiconductor NCP5106BMNTWG is a high voltage gate driver IC that provides two outputs for direct drive of N-channel power MOSFETs or IGBTs in a half-bridge configuration. It utilizes bootstrap techniques for efficient high-side power switch driving and operates with independent logic inputs.
Key electrical features include a high voltage range up to 600V, dV/dt immunity of ±50 V/nsec, and a gate drive supply range from 10V to 20V. The device offers output source/sink current capability of 250mA / 500mA and is compatible with 3.3V and 5V logic inputs. It also features matched propagation delays between channels and 100 ns internal fixed dead time for cross-conduction protection.
This gate driver is suitable for various power converter applications, including half-bridge, asymmetrical half-bridge, active clamp, and full-bridge converters. It is supplied in a 10-DFN (4x4) surface mount package, designed for efficient thermal performance and compact integration into power systems.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.01 | $2.01 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The high voltage rating is 600 V.
The operating junction temperature range is -40°C to 125°C.
The device is available in a 10-VDFN Exposed Pad surface mount package.
The output source current is 250 mA and sink current is 500 mA.
The internal fixed dead time is 100 ns.
Yes, the input logic is compatible with 3.3 V and 5 V signals.
The gate drive supply voltage range is 10 V to 20 V.