| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
250 pcs
|
250 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Mounting Type | |
| Package / Case | |
| Tape & Reel |
The NCP5106BDR2G from Infineon is a high voltage gate driver integrated circuit. It provides two outputs suitable for direct drive of N-channel power MOSFETs or IGBTs, commonly arranged in a half-bridge configuration. This device utilizes bootstrap techniques to ensure proper drive of the high-side power switch.
Key electrical specifications include a high voltage range of up to 600V and dV/dt immunity of ±50 V/nsec. The gate drive supply operates from 10V to 20V, with output source and sink current capabilities of 250 mA and 500 mA, respectively. It is compatible with 3.3V and 5V logic inputs and offers an extended allowable negative bridge pin voltage swing to -10V for signal propagation. The device also features cross-conduction protection with a 100 ns internal fixed dead time and under-voltage lockout (UVLO) for both channels.
This gate driver is available in a SOIC-8 package, designed for surface mount applications. Its features make it suitable for various power converter applications, including half-bridge and full-bridge converters.
The high voltage range is up to 600 V.
The dV/dt immunity is ±50 V/nsec.
The gate drive supply range is from 10 V to 20 V.
The output source current capability is 250 mA and the sink current capability is 500 mA.
It is compatible with 3.3 V and 5 V logic inputs.
The internal fixed dead time is 100 ns.
The NCP5106BDR2G is supplied in a SOIC-8 package.