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120 pcs
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120 pcs | On Request | 1 | On Request | On Request | 19+ | On Request | On Request |
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The NCP5106ADR2G is a high voltage gate driver IC manufactured by On Semiconductor, suitable for driving N-channel power MOSFETs or IGBTs in half-bridge configurations. It utilizes bootstrap techniques for efficient high-side switch driving and operates with two independent inputs.
Key electrical features include a high voltage range up to 600V, dV/dt immunity of ±50 V/nsec, and a gate drive supply range from 10V to 20V. The device provides independent high and low drive outputs with current capabilities of 250 mA source and 500 mA sink. It is compatible with 3.3V and 5V logic inputs and offers matched propagation delays between channels. For protection, it includes cross-conduction prevention with a 100 ns internal fixed dead time (Version B) and under-voltage lockout (UVLO) for both channels.
This gate driver is designed for applications such as half-bridge power converters, complementary drive converters, and full-bridge converters. It is supplied in an 8-SOIC package suitable for surface mounting. The operating temperature range is -40°C to 125°C (TJ).
| Qty | Low | High |
|---|---|---|
| 1+ | $2.01 | $2.01 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The high voltage range for the NCP5106ADR2G is up to 600 V.
The operating temperature range for the NCP5106ADR2G is -40°C to 125°C (TJ).
The NCP5106ADR2G is available in an 8-SOIC package.
The NCP5106ADR2G is RoHS3 Compliant.
The moisture sensitivity level (MSL) for the NCP5106ADR2G is 1 Unlimited.
The NCP5106ADR2G has an output source current capability of 250 mA and a sink current capability of 500 mA.
The NCP5106ADR2G supports IGBT and N-Channel MOSFET gate types.