NCP5104DR2G The ON Semiconductor NCP5104DR2G is a single-input, high voltage gate driver designed for half-bridge configurations. It supports N-channel MOSFETs or IGBTs with a high-side voltage rating up to 600V.
Mfr Part #:

NCP5104DR2G

Available from 3 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor NCP5104DR2G is a single-input, high voltage gate driver designed for half-bridge configurations. It supports N-channel MOSFETs or IGBTs with a high-side voltage rating up to 600V.
Total Stock: 32,191 pcs
$ Price Range: $2.01

NCP5104DR2G Available from 3 distributors

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25,000 pcs
25000 pcs On Request 1 On Request On Request On Request On Request On Request
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6,216 pcs
6216 pcs On Request 1 On Request On Request On Request On Request On Request
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975 pcs
975 pcs On Request 1 On Request On Request 1646+ On Request On Request

NCP5104DR2G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Channel Type
Current
Driven Configuration
Gate Type
Halogen Free
High Side Voltage
Input Type
Logic Voltage
Mounting Type
Number of Drivers
Operating Temperature
Rise
Supplier Device Package
Supplier Package
Voltage

NCP5104DR2G Description

Short technical summary and product information.

The NCP5104DR2G from ON Semiconductor is a high voltage power gate driver. It provides two outputs for direct drive of N-channel power MOSFETs or IGBTs arranged in a half-bridge configuration, utilizing a bootstrap technique for high-side switch drive.

 

Key electrical specifications include a high voltage range up to 600 V, dV/dt immunity of ±50 V/nsec, and a gate drive supply range from 10 V to 20 V. The device offers high and low drive outputs with current capabilities of 250 mA source and 500 mA sink. It is compatible with 3.3 V and 5 V input logic and features matched propagation delays between channels. An internal fixed dead time of 520 ns is included, along with under-voltage lockout (UVLO) for both channels.

 

This driver is suitable for half-bridge power converters. It comes in an 8-SOIC package with surface mount mounting type. The operating temperature range is -40°C to 125°C (TJ). The NCV prefix variant is AEC-Q100 qualified and PPAP capable for automotive applications.

 

The NCP5104DR2G is Pb-free, Halogen Free/BFR free, and RoHS compliant.

NCP5104DR2G Quick Information

Product Type: Gate Driver
Canonical Name: NCP5104DR2G Single Input High Voltage High and Low-Side MOSFET or IGBT Driver
Subcategory: Power Management ICs

NCP5104DR2G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free

NCP5104DR2G Estimated Pricing

Qty Low High
1+ $2.01 $2.01

Estimated market price range - modelled values for guidance only, not live distributor offers.

NCP5104DR2G Features

  • High voltage range up to 600 V.
  • Gate drive supply from 10 V to 20 V.
  • Output current 250 mA source, 500 mA sink.
  • Internal fixed dead time of 520 ns.
  • Surface mount 8-SOIC package.

NCP5104DR2G Applications

  • Half-bridge power converter designs.
  • Motor drive and inverter circuits.
  • Switch-mode power supplies.
  • Class D audio amplifiers.

NCP5104DR2G FAQs

6 frequently asked questions generated from this part’s specifications.
What is the operating voltage range for the gate drive supply?

10V to 20V.

What is the high-side voltage rating?

600V maximum.

What is the output current capability?

250mA source, 500mA sink.

What is the fixed dead time?

520 ns.

What is the operating temperature range?

-40°C to 125°C (junction).

What package is the NCP5104DR2G available in?

8-SOIC (0.154", 3.90mm Width).

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