| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,500 pcs
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2500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The NCEP85T25 is an N-Channel Super Trench Power MOSFET designed by NCE Power Semiconductor. It utilizes Super Trench technology for efficient high-frequency switching performance, minimizing both conduction and switching power losses. This MOSFET boasts a drain-source voltage (VDS) of 85V and a continuous drain current (ID) of 250A.
Key electrical characteristics include a very low on-resistance (RDS(ON)) of less than 2.6mΩ at VGS=10V and an excellent gate charge times Rds(on) product. The device operates at temperatures up to 175°C and is Pb-free.
Applications include DC/DC converters, high-frequency switching, and synchronous rectification. The NCEP85T25 is available in a TO-220-3L package, suitable for through-hole mounting.
With its optimized Super Trench technology, the NCEP85T25 offers a compelling combination of low on-resistance and efficient switching, making it suitable for demanding power electronics designs.
The maximum drain-source voltage (VDS) for the NCEP85T25 is 85V.
The NCEP85T25 has a continuous drain current rating of 250A.
The typical on-resistance (RDS(ON)) of the NCEP85T25 at VGS=10V is 2.2mΩ.
The operating junction and storage temperature range for the NCEP85T25 is -55°C to 175°C.
The NCEP85T25 is available in a TO-220-3L package.
The NCEP85T25 is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the NCEP85T25 is 1 Unlimited.