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2,130 pcs
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2130 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The NCEP026N10 is an N-Channel Power MOSFET from NCE, utilizing Super Trench II technology for efficient high-frequency switching. It is optimized to minimize conduction and switching power losses with a low R DS(ON) and Qg.
Key electrical specifications include a drain-source voltage (VDS) of 100V and a continuous drain current (ID) of 200A at 25°C. The on-resistance (RDS(ON)) is typically 2.4mΩ for the TO-220 package and 2.2mΩ for the TO-263 package at VGS=10V and ID=100A. The device features a wide operating junction and storage temperature range from -55°C to 175°C.
This MOSFET is ideal for applications such as DC/DC converters, high-frequency switching, and synchronous rectification. It is available in TO-220 and TO-263 packages.
The drain-source breakdown voltage is 100V minimum.
The NCEP026N10 is available in TO-220 and TO-263 packages.
The operating junction and storage temperature range is -55°C to 175°C.
The continuous drain current is 200A at 25°C case temperature and 142A at 100°C.
The typical gate threshold voltage is 3V.
The typical drain-source on-resistance is 2.4mΩ for the TO-220 package and 2.2mΩ for the TO-263 package at VGS=10V.
The maximum power dissipation is 300W at 25°C case temperature.