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3,593 pcs
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3593 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The NCEP023N10LL is an N-Channel Power MOSFET from NCE, built with Super Trench II technology for efficient high-frequency switching. This device is optimized to minimize conduction and switching power losses, making it suitable for applications requiring high efficiency.
Key electrical specifications include a drain-source voltage (VDS) of 100V and a continuous drain current (ID) of 300A. The on-state resistance (RDS(ON)) is a low 1.7mΩ typical at VGS=10V. It also features a low gate charge (Qg) and an excellent figure of merit (FOM).
This MOSFET operates at temperatures up to 175°C and comes in a TOLL package. Its design makes it ideal for DC/DC converters, high-frequency switching, and synchronous rectification applications where performance and efficiency are critical.
The minimum drain-source breakdown voltage is 100V at VGS=0V, ID=250µA.
It is available in a TOLL (Transistor Outline - No Lead) package.
The operating junction and storage temperature range is -55°C to 175°C.
The maximum continuous drain current is 300A at TC=25°C.
The typical drain-source on-state resistance is 1.7mΩ at VGS=10V, ID=150A.