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1,145 pcs
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1145 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The NCE82H140D is a high-performance N-Channel enhancement mode power MOSFET from Wuxi NCE Power Co., Ltd. It features a drain-source voltage (VDS) of 82V and a continuous drain current (ID) of 140A.
This MOSFET is designed using advanced trench technology and a high-density cell design, providing excellent on-state resistance (RDS(ON)) of less than 5.2mΩ at VGS=10V (typically 4.3mΩ). It also offers low gate charge and high ESD capability, making it suitable for demanding applications.
The NCE82H140D is packaged in a TO-263-2L surface-mount package, offering good heat dissipation. Its electrical characteristics include a gate threshold voltage (VGS(th)) of 2.5V to 3.8V (typically 3V) and a total gate charge (Qg) of 158nC.
Applications include power switching, hard-switched and high-frequency circuits, and uninterruptible power supplies (UPS). The device is fully characterized for avalanche voltage and current, ensuring stability and uniformity.
The NCE82H140D is an N-Channel enhancement mode power MOSFET designed for high-efficiency power switching applications.
It features an 82V drain-source voltage, 140A continuous drain current, and a low RDS(ON) of 4.3mΩ (typical).
It is ideal for power switching, uninterruptible power supplies (UPS), and hard-switched high-frequency circuits.
The NCE82H140D is supplied in a TO-263-2L package.
The typical Drain-Source On-State Resistance is 4.3mΩ at VGS=10V and ID=20A.
The total gate charge is typically 158nC.