| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,696 pcs
|
1696 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Input Capacitance | |
| Mounting Type | |
| Reverse Recovery Time | |
| SVHC Present |
The NCE80H12 is an N-Channel Enhancement Mode Power MOSFET manufactured by NCE Power Semiconductor Co., Ltd. It utilizes advanced trench technology for excellent RDS(ON) and low gate charge, making it suitable for various power switching applications.
Key electrical specifications include a Drain-Source Voltage (Vds) of 80V, a continuous Drain Current (Id) of 120A, and a Pulsed Drain Current (Idm) of 450A. The Drain-Source On-State Resistance (RDS(ON)) is less than 6mΩ at a VGS of 10V. The device also features a maximum power dissipation of 220W and a thermal resistance junction-to-case of 0.68℃/W.
This MOSFET is characterized by its high density cell design for ultra-low Rdson, fully characterized avalanche voltage and current, and good stability. It is designed for applications such as power switching, hard-switched and high-frequency circuits, and uninterruptible power supplies.
The NCE80H12 comes in a TO-220 package, suitable for through-hole mounting. It is a Pb-Free product, indicating compliance with environmental standards.
The maximum drain-source voltage is 80V.
The NCE80H12 is available in a TO-220 package.
-55 to 175°C.
120A at 25°C, and 84A at 100°C case temperature.
Typical 4.9mΩ, maximum 6mΩ.
163nC typical at VDS=30V, ID=30A, VGS=10V.