| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,907 pcs
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1907 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The NCE7190A is an N-Channel Enhancement Mode Power MOSFET manufactured by NCE Power. It utilizes advanced trench technology to achieve excellent RDS(ON) with low gate charge, making it suitable for various power switching applications.
Key electrical characteristics include a Drain-Source Voltage (VDS) of 71V, a continuous Drain Current (ID) of 100A, and a maximum Drain-Source On-State Resistance (RDS(ON)) of 5.2mΩ at VGS=10V. The device also features a low gate threshold voltage and high transconductance.
Designed for applications such as PWM, load switching, and general-purpose use, the NCE7190A is housed in a TO-220-3L package, offering good heat dissipation. Its high density cell design contributes to its ultralow RDS(ON) and high EAS capability.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.54 | $2.54 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum Drain-Source Voltage (VDS) for the NCE7190A is 71V.
The continuous Drain Current (ID) for the NCE7190A is 100A.
The maximum Drain-Source On-State Resistance (RDS(ON)) for the NCE7190A is 5.2mΩ at VGS=10V.
The typical Gate Threshold Voltage (VGS(th)) for the NCE7190A is 3V.
The NCE7190A is available in a TO-220-3L package.
The operating junction and storage temperature range for the NCE7190A is -55 to 175℃.