| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,505 pcs
|
2505 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Package / Case | |
| Power Dissipation | |
| SVHC Present |
The NCE60P50K is a P-Channel MOSFET manufactured by NCE Power Semiconductor. It utilizes advanced trench technology and design to achieve excellent RDS(ON) with low gate charge, making it suitable for high current load applications.
Key electrical specifications include a Drain-Source Voltage of 60V and a typical on-state resistance (RDS(ON)) of 29mΩ. The device has a power dissipation rating of 79W. It is packaged in a TO-252 case.
This MOSFET is designed for applications requiring efficient power handling. Its characteristics make it a viable option for various power management tasks within electronic systems.
The Drain-Source Voltage is 60V.
The typical RDS(ON) is 29mΩ.
The power dissipation is 79W.
The NCE60P50K is supplied in a TO-252 package.
The NCE60P50K is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.