| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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3,196 pcs
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3196 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The NCE60P25K is a P-Channel MOSFET manufactured by NCE Power. This component is designed for various electronic applications requiring efficient power switching. It features a maximum drain-source voltage of 60V and a continuous drain current of 25A at 25°C.
The MOSFET has a typical gate threshold voltage of 3.5V at 250uA and a maximum on-resistance of 45 mOhms at 20A and 10V. The maximum power dissipation is rated at 90W.
Packaged in a TO-252 (DPAK) surface-mount package, the NCE60P25K is suitable for applications where space is a consideration. Its P-channel configuration makes it useful in specific circuit designs, such as load switching or power management.
This MOSFET is RoHS3 compliant, has an MSL of 1, and is REACH unaffected. It is designed for reliable performance in demanding applications.
The drain-source voltage rating is 60 V.
The continuous drain current is 25 A at 25°C.
The maximum on-resistance is 45 mΩ at 20A drain current and 10V gate-source voltage.
The typical gate threshold voltage is 3.5 V at 250 µA drain current.
The maximum power dissipation is 90 W at ambient temperature.
The NCE60P25K is available in a TO-252-2 (DPAK) package.
It is a P-Channel MOSFET.