| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,319 pcs
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1319 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| SVHC Present |
The NCE60P04Y is a P Channel MOSFET manufactured by NCE Power. This component is designed for various electronic applications requiring efficient power switching. It offers a drain-source voltage of 60V and a continuous drain current of 4A at 25°C.
The MOSFET has a gate threshold voltage of 3V at 250uA and a maximum on-resistance of 120 mOhms at 4A and 10V. The maximum power dissipation is rated at 1.5W.
Packaged in a compact SOT-23-3L surface-mount case, the NCE60P04Y is suitable for applications where space is a constraint. Its P-channel trench design ensures reliable performance in power management circuits.
This component is classified under Transistors - FETs, MOSFETs - Single. It is supplied by NCE Power and is available globally.
The drain-source voltage (Vdss) of the NCE60P04Y is 60V.
The continuous drain current (Id) for the NCE60P04Y is 4A at 25°C.
The gate threshold voltage (Vgs(th)) of the NCE60P04Y is 3V at 250uA.
The on-resistance (Rds On) of the NCE60P04Y is 120 mOhms at 4A and 10V.
The NCE60P04Y MOSFET is supplied in a SOT-23-3L package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the NCE60P04Y is 1 Unlimited.