BC847B/215
Nexperia USA Inc.
The Nexperia USA Inc. BC847B/215 is a bipolar transistor. It is RoHS3 Compliant and has an MSL Level 1 rating.
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1,837 pcs
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1837 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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1,737 pcs
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1737 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request |
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The NCE6080K is an N-Channel MOSFET manufactured by NCE Power Semiconductor. This component employs advanced trench technology and design, resulting in excellent RDS(ON) and low gate charge characteristics. It is suitable for a wide variety of applications.
The primary electrical specification highlighted is a Drain-Source Voltage of 60V. The advanced design of the NCE6080K makes it a versatile choice for power management and switching applications where efficiency and performance are critical.
Further details regarding specific RDS(ON) values, gate charge, continuous and pulsed drain current, gate-source voltage, and operating temperature would typically be found in the datasheet. The component's packaging and mounting type are also important considerations for integration into electronic designs.
The Drain-Source Voltage for the NCE6080K MOSFET is 60V.
The NCE6080K uses advanced trench technology and design.
The NCE6080K offers excellent RDS(ON) with low gate charge.