| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,210 pcs
|
2210 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Input Capacitance | |
| Mounting Type | |
| Package / Case | |
| Reverse Recovery Time | |
| SVHC Present |
The NCE6080A is an N-Channel Enhancement Mode Power MOSFET designed by NCE. It utilizes advanced trench technology to achieve excellent RDS(ON) with low gate charge, making it suitable for a variety of applications including PWM and load switching.
Key electrical specifications include a Drain-Source Voltage (VDS) of 60V and a continuous Drain Current (ID) of 80A. The Drain-Source On-State Resistance (RDS(ON)) is rated at less than 6.3mΩ at VGS=10V and less than 7.8mΩ at VGS=4.5V. The device also features a high density cell design for ultra-low RDS(ON) and is fully characterized for avalanche voltage and current.
This MOSFET is packaged in a TO-220-3L package, designed for through-hole mounting. It operates within a junction and storage temperature range of -55 to 175℃. The thermal resistance from junction to case is 1.36℃/W.
Additional electrical characteristics include a Gate Threshold Voltage (VGS(th)) ranging from 0.8V to 1.8V (typical 1.3V), input capacitance (Ciss) of 4000pF, and output capacitance (Coss) of 290pF. Switching characteristics are also detailed, with turn-on delay time at 8.5nS and turn-off delay time at 40nS.
60V.
80A at 25°C case temperature.
5.5mΩ at VGS=10V, ID=20A.
-55°C to 175°C.
TO-220-3L through-hole package.
Yes, it is lead-free.
0.8V to 1.8V, typical 1.3V.