BC847B/215
Nexperia USA Inc.
The Nexperia USA Inc. BC847B/215 is a bipolar transistor. It is RoHS3 Compliant and has an MSL Level 1 rating.
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1,000 pcs
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1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The NCE6008AS is an N-Channel MOSFET from NCE, designed for power switching and load management. It features a drain-source voltage (VDS) of 60V and a continuous drain current (ID) of 8A. The typical on-resistance (RDS(ON)) is 15.6 mΩ at a gate drive voltage of 10V.
This MOSFET is housed in an SOP-8 package, suitable for various power management and industrial applications. Its specifications make it ideal for applications requiring efficient power switching and load control. Avoid applications requiring higher than 8A continuous current or higher voltage ratings. Careful consideration of thermal dissipation requirements and gate drive voltage compatibility is recommended during design.
Key electrical characteristics include a 60V breakdown voltage and an 8A current handling capability. The low on-resistance minimizes power loss during operation. The SOP-8 package offers a compact footprint for integration into electronic designs.
The NCE6008AS is a 60V, 8A N-Channel MOSFET in an SOP-8 package, optimized for power switching and load management.
The NCE6008AS has a 60V drain-source voltage, 8A continuous drain current, and a typical on-resistance of 15.6 mΩ at 10V gate drive.
The NCE6008AS MOSFET is supplied in an SOP-8 package.
The NCE6008AS is RoHS3 Compliant and REACH Unaffected.
The Moisture Sensitivity Level (MSL) for the NCE6008AS is Level 1.