| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,145 pcs
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1145 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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1,000 pcs
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1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The NCE6005AR is an N-Channel MOSFET manufactured by NCE Power Semiconductor. It features a Drain-Source Voltage of 60V and is designed using advanced trench technology. This design provides excellent RDS(ON) with low gate charge, making it suitable for a wide variety of applications. The MOSFET is part of the Transistors - FETs, MOSFETs - Single category.
Key electrical characteristics include a 60V Drain-Source Voltage. While specific details on RDS(ON), gate charge, and continuous drain current are not fully detailed in the available information, the advanced trench technology suggests efficient performance. The component is classified under the N-Channel Enhancement Mode Power MOSFET type.
This MOSFET is intended for use in various electronic circuits requiring efficient switching or amplification. Its specifications make it a versatile component for designers. Further details regarding package type, mounting, and specific operating conditions would typically be found in the manufacturer's datasheet.
The Drain-Source Voltage of the NCE6005AR MOSFET is 60V.
The NCE6005AR MOSFET uses advanced trench technology.
The RoHS status is RoHS3 Compliant and the REACH status is REACH Unaffected.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.