| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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2,900 pcs
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2900 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name |
The NCE6003Y is an N-Channel MOSFET manufactured by NCE Power Semiconductor. This component is designed using advanced trench technology, which provides excellent RDS(ON) characteristics and low gate charge. It is suitable for operation with gate voltages as low as 2.5V.
With a Drain-Source Voltage rating of 60V, the NCE6003Y is well-suited for applications such as battery protection and general switching tasks. Its design prioritizes efficiency and performance in demanding electronic circuits.
This MOSFET is part of the broader category of discrete semiconductor products, specifically single transistors. Its advanced technology makes it a reliable choice for engineers designing power management solutions and other switching circuits where performance and efficiency are critical.
The Drain-Source Voltage of the NCE6003Y MOSFET is 60V.
The NCE6003Y MOSFET uses advanced trench technology.
The NCE6003Y MOSFET can operate with gate voltages as low as 2.5V.
The NCE6003Y MOSFET is suitable for use as a battery protection or in other switching applications.