| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,543 pcs
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1543 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The NCE4953 from VBsemi Elec is a P-Channel MOSFET designed for power switching applications. It offers a drain-source voltage (Vdss) of 30V and a continuous drain current (Id) of 7.3A. The device exhibits a low drain-source on-resistance (Rdson) of 35mOhms when measured at 10V gate-source voltage and 6.3A drain current.
With a power dissipation (Pd) of 5W and a gate threshold voltage (Vgs(th)) of 3V at 250uA, the NCE4953 is suitable for various electronic circuits. Its input capacitance (Ciss) is 1.35nF at 15V, and the total gate charge (Qg) is 15nC at 4.5V. The operating temperature range is from -55°C to +150°C.
This MOSFET is housed in a standard SOP-8 package, facilitating surface-mount assembly. Its P-Channel configuration makes it useful for applications requiring a high-side switch or complementary switching arrangements. The component is identified as RoHS3 Compliant, MSL 1 Unlimited, and REACH Unaffected, though these statuses are noted with low confidence.
30V.
7.3A.
35 mOhms at Vgs=10V, Id=6.3A.
SOP-8.
-55°C to +150°C.
3V at 250uA.
5W.