| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,480 pcs
|
3480 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name |
The NCE4614 is a MOSFET manufactured by NCE Power Semiconductor, designed using advanced trench technology. This technology provides excellent RDS(ON) and low gate charge, making it suitable for various applications, including level-shifted high-side switches.
Key electrical characteristics include a Drain-Source Voltage of 40V. While specific RDS(ON) and gate charge values are not detailed in the available information, the design implies efficient switching performance. The complementary MOSFETs can be used in conjunction for complex switching configurations.
This component falls under the category of Discrete Semiconductor Products, specifically Single MOSFETs. Its application scope is broad, benefiting from its advanced trench technology for optimized electrical parameters. Further details on specific performance metrics and packaging would typically be found in the manufacturer's datasheet.
The Drain-Source Voltage for the NCE4614 is 40V.
The NCE4614 MOSFET uses advanced trench technology.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.
The REACH status is REACH Unaffected.