| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,651 pcs
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1651 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The NCE40P40K is a P-Channel Enhancement Mode Power MOSFET manufactured by NCE Power. It utilizes advanced trench technology and design to achieve excellent R DS(ON) with low gate charge, making it suitable for high current load applications.
Key electrical specifications include a Drain-Source Voltage (V DS) of -40V and a Continuous Drain Current (ID) of -40A at 25°C. The device offers a low Drain-Source On-State Resistance (R DS(ON)) of less than 14mΩ at VGS=-10V and ID=-12A, and less than 24mΩ at VGS=-4.5V and ID=-12A. It also features a Gate Threshold Voltage (V GS(th)) between -1.5V and -2.5V.
With a Maximum Power Dissipation (PD) of 80W at 25°C and a thermal resistance of 1.88℃/W (Junction-to-Case), the NCE40P40K is designed for good heat dissipation. The operating junction and storage temperature range is from -55°C to 175°C.
This MOSFET is packaged in a TO-252-2 (DPAK) surface-mount package. It is well-suited for power switching applications, hard-switched and high-frequency circuits, and uninterruptible power supply systems.
-40V
-40A
12mΩ
-55 To 175℃
TO-252-2 (DPAK)
RoHS3 Compliant
1 Unlimited