| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,477 pcs
|
1477 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| FET Type | |
| Package / Case | |
| Power Dissipation |
The NCE40H12K is an N-channel MOSFET manufactured by NCE Power. This component is designed for power applications, featuring a drain-source voltage (Vds) of 40V and a continuous drain current (Id) of 120A at 25°C.
Key electrical characteristics include a low on-resistance (Rds(on)) of 4 mOhms at 20A and 10V, and a gate threshold voltage (Vgs(th)) of 2.5V at 250uA. The maximum power dissipation is rated at 120W.
This MOSFET is housed in a TO-252 (DPAK) package, suitable for surface-mount applications. Its N-channel trench construction is optimized for efficient switching and power handling.
Compliance information indicates RoHS3 compliance and an MSL rating of 1. REACH status is unaffected.
The drain-source voltage (Vds) is 40V.
The continuous drain current (Id) is 120A at 25°C.
The on-resistance (Rds(on)) is 4 mOhms at 20A and 10V.
The NCE40H12K is in a TO-252 (DPAK) package.
The NCE40H12K is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1.