| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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3,967 pcs
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3967 pcs | On Request | 1 | On Request | On Request | 17+ | On Request | On Request | |
|
1,540 pcs
|
1540 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| FET Type | |
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| Power Dissipation |
The NCE30P50G is a P-channel MOSFET manufactured by NCE Power. This component is designed for power switching applications and features a drain-to-source voltage of 30V and a continuous drain current of 50A at 25°C (Tc).
Key electrical characteristics include a maximum gate threshold voltage of 2.2V at 250µA and a maximum on-resistance of 7mΩ at 10A and 10V. The device has a maximum power dissipation of 35W at ambient temperature (Ta).
Packaged in a DFN5x6-EP, this MOSFET is suitable for surface-mount designs. Its specifications make it a viable option for various power management circuits where efficient switching is required.
The drain-to-source voltage is 30V.
The continuous drain current is 50A at 25°C (Tc).
The maximum on-resistance is 7mΩ at 10A, 10V.
The NCE30P50G is in a DFN5x6-EP package.
The gate threshold voltage is 2.2V at 250µA.