BC847B/215
Nexperia USA Inc.
The Nexperia USA Inc. BC847B/215 is a bipolar transistor. It is RoHS3 Compliant and has an MSL Level 1 rating.
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7,450 pcs
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7450 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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1,000 pcs
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1000 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request |
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The NCE30H12K is an N-Channel Enhancement Mode Power MOSFET manufactured by NCE Power Semiconductor. It features advanced trench technology and design, providing excellent RDS(ON) with low gate charge. This MOSFET is suitable for a wide variety of applications.
The key electrical specification available is a Drain-Source Voltage of 30V. The part number is NCE30H12K and it is branded by NCE Power Semiconductor. This component is classified under Discrete Semiconductor Products, specifically within the Transistors - FETs, MOSFETs - Single category.
Further specifications such as RDS(ON), gate charge, continuous and pulsed drain current, gate threshold voltage, maximum gate voltage, and technology details are not explicitly provided in the available data but are typically found in the datasheet for this type of component. The RoHS status is listed as RoHS3 Compliant, and the Moisture Sensitivity Level (MSL) is 1 Unlimited, with REACH status as REACH Unaffected. However, these compliance details are noted as having low confidence due to being sourced from existing database information without direct verification.
The Drain-Source Voltage for the NCE30H12K is 30V.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.
The REACH status is REACH Unaffected.