| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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2,284 pcs
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2284 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Gate Charge | |
| SVHC Present |
The NCE30D2519K is a single N-Channel MOSFET manufactured by NCE Power Semiconductor. This component features a typical on-resistance (RDS(ON)) of 30 mOhm when driven at VGS of 10V and ID of 15A, enabling efficient power switching in various applications. The device is designed with low gate charge to minimize switching losses and improve overall efficiency in high-frequency circuits.
This MOSFET belongs to the discrete semiconductor category and is suitable for use in power management, DC-DC conversion, and load switching functions. While specific package and mounting type are not provided in available data, the part is typically used in surface-mount designs common for modern power electronics.
The typical RDS(ON) is 30 mOhm at VGS of 10V and ID of 15A.
Yes, the device is specified as having low gate charge.