NCEP60T12AK
NCE
The NCEP60T12AK is a high-performance 60V, 120A N-Channel Super Trench MOSFET. It is optimized for high-frequency power conversion and comes in a TO-252-2L package.
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7,386 pcs
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3,481 pcs
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3481 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request |
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The NCE3050K is an N-channel power MOSFET from NCE, designed for efficient power switching and Uninterruptible Power Supply (UPS) applications. It features a drain-source voltage (VDS) of 30V and a continuous drain current (ID) of 50A. The on-resistance (RDS(ON)) is specified at a maximum of 11mΩ when driven at 10V gate-source voltage (VGS).
This MOSFET utilizes advanced trench technology, providing low on-resistance and reduced gate charge. It is housed in a TO-252-2L package, suitable for surface-mount designs. The NCE3050K is recommended for power switching, UPS systems, and high-frequency circuits. Applications requiring voltages significantly above 30V should be avoided, and thermal dissipation requirements should be checked before use.
Key specifications include a 30V drain-source voltage, 50A continuous drain current, and an RDS(ON) of less than 11mΩ at 10V gate drive. The component is listed as RoHS3 Compliant, MSL 1 Unlimited, and REACH Unaffected, though these compliance statuses are unverified.
The drain-source voltage (VDS) of the NCE3050K is 30V.
The NCE3050K has a continuous drain current (ID) of 50A.
The on-resistance (RDS(ON)) of the NCE3050K is a maximum of 11mΩ at a gate drive voltage of 10V.
The NCE3050K is supplied in a TO-252-2L package.