| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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17,470 pcs
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17470 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request | |
|
1,173 pcs
|
1173 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name |
The NCE3018AS is an N-Channel MOSFET manufactured by NCE Power Semiconductor. It utilizes advanced trench technology and design to achieve excellent RDS(ON) with low gate charge, making it suitable for a wide variety of applications.
Key electrical specifications include a Drain-Source Voltage of 30V. The device is designed for efficient power switching and control.
This MOSFET is part of the single Transistors - FETs, MOSFETs category. Its design focuses on performance and reliability in power electronic circuits.
The Drain-Source Voltage of the NCE3018AS MOSFET is 30V.
The NCE3018AS MOSFET uses advanced trench technology and design.
The NCE3018AS MOSFET is designed to provide excellent RDS(ON) with low gate charge.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.
The REACH status is REACH Unaffected.