| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,077 pcs
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1077 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| SVHC Present |
The NCE3010S is an N-Channel MOSFET manufactured by NCEPOWER. It is designed using advanced trench technology, providing excellent RDS(ON) and low gate charge, making it suitable for a wide variety of applications.
Key electrical characteristics include a Drain-Source Voltage of 20V. The MOSFET's design focuses on efficiency and performance in power switching applications.
This component is part of the single MOSFET category, designed for general-purpose switching and amplification tasks. Its specifications suggest suitability for various electronic circuits where efficient power management is required.
The Drain-Source Voltage for the NCE3010S is 20V.
The NCE3010S uses advanced trench technology and design.
The NCE3010S offers excellent RDS(ON) with low gate charge.