| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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6,000 pcs
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6000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
52 pcs
|
52 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request |
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The NCE2309 is a P Channel MOSFET manufactured by NCE Power. This component is designed for general-purpose switching and amplification applications. It offers a drain-source voltage (Vdss) of 60V and a continuous drain current (Id) of 1.6A.
The MOSFET has a low on-resistance (Rds(on)) of 140 mOhms at a gate-source voltage of 10V and a drain current of 1.5A, ensuring efficient power delivery. Its power dissipation (Pd) is rated at 1.5W, and it operates within a temperature range of -55°C to +150°C.
Packaged in a compact SOT-23 surface-mount case, the NCE2309 is suitable for applications where space is limited. The gate threshold voltage (Vgs(th)) is typically 2V at 250uA. Other electrical characteristics include input capacitance (Ciss) of 370pF, reverse transfer capacitance (Crss) of 5pF, and a total gate charge (Qg) of 14.3nC, all measured under specified conditions.
This MOSFET is a reliable choice for designers seeking a P Channel device with moderate power handling capabilities and standard surface-mount packaging.
The drain-source voltage rating is 60V.
The continuous drain current is 1.6A.
Typical on-resistance is 140 mOhm at 10V gate drive.
The NCE2309 is available in a SOT-23 package.
The operating junction temperature range is -55°C to +150°C.
It is a P-Channel MOSFET.