| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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375 pcs
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375 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The NCE2060K is a high-performance N-Channel enhancement mode power MOSFET designed by NCE Power Semiconductor Co., Ltd. It leverages advanced trench technology and a high-density cell design to achieve exceptionally low on-resistance (RDS(ON)) and reduced gate charge, making it ideal for power management applications.
Key electrical characteristics include a Drain-Source Voltage (VDS) of 20V and a continuous Drain Current (ID) of 60A at 25°C, with an RDS(ON) as low as 6mΩ at VGS=4.5V. The device is fully characterized for avalanche voltage and current, ensuring robust performance. It operates across a wide temperature range from -55°C to 150°C.
Packaged in a TO-252-2L surface-mount package, the NCE2060K offers excellent heat dissipation. Its applications include load switching, hard-switched and high-frequency circuits, and uninterruptible power supplies. The MOSFET is 100% UIS and ΔVds tested for reliability.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.67 | $1.67 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum continuous drain current (ID) for the NCE2060K is 60A at 25°C.
The Drain-Source Breakdown Voltage (BVDSS) of the NCE2060K is 20V.
The typical on-resistance (RDS(ON)) of the NCE2060K is less than 6mΩ at VGS=4.5V and ID=20A.
The operating junction and storage temperature range for the NCE2060K is -55°C to 150°C.
The NCE2060K is available in a TO-252-2L package.
The NCE2060K is RoHS3 Compliant.