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15 pcs
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15 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The NCE1505S is an N-Channel Enhancement Mode Power MOSFET manufactured by NCE Power. This component utilizes advanced trench technology and design to achieve excellent on-resistance (RDS(ON)) with low gate charge, making it suitable for a wide range of applications.
Key electrical specifications include a drain-source voltage (VDS) of 150V and a continuous drain current (ID) of 5.2A. The typical on-resistance is 44mΩ at VGS=10V and 25°C. The MOSFET is housed in a standard SOP-8 package.
This MOSFET is designed for efficient power switching and can be used in various electronic circuits requiring reliable performance. Its specifications make it a versatile component for power management solutions.
The maximum drain-source voltage (VDS) for the NCE1505S is 150V.
The continuous drain current (ID) for the NCE1505S is 5.2A.
The typical on-resistance (RDS(ON)) of the NCE1505S is 44mΩ at 25°C with a VGS of 10V.
The NCE1505S MOSFET is supplied in an SOP-8 package.