| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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32,500 pcs
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32500 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request | |
|
1,842 pcs
|
1842 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Input Capacitance | |
| SVHC Present |
The NCE0130KA is an N-Channel Enhancement Mode Power MOSFET manufactured by NCE. It utilizes advanced trench technology and design to achieve excellent on-resistance (RDS(ON)) with low gate charge. This MOSFET is rated for a Drain-Source Voltage (VDS) of 100V and a continuous Drain Current (ID) of 30A.
Key electrical characteristics include a low RDS(ON) of 32mΩ at VGS=10V and 25℃, and 35mΩ at VGS=4.5V and 25℃. The gate charge (Qg) is 67.2nC at 10V, and the input capacitance (Ciss) is 2.479nF at 50V. These specifications make the NCE0130KA suitable for a wide variety of applications requiring efficient power switching.
This component is designed for general use and is Pb-Free. Its robust design and performance metrics allow for integration into various electronic systems where reliable power management is essential.
The drain-source breakdown voltage is 100V minimum.
The continuous drain current is 30A minimum.
The maximum on-resistance is 32mΩ at VGS=10V, ID=30A, 25°C.
The typical gate charge is 67.2nC at 10V.
The typical input capacitance is 2.479nF at 50V.
The NCE0130KA is marked as RoHS3 Compliant.
The moisture sensitivity level is MSL 1 Unlimited.