| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,831 pcs
|
5831 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request | |
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| FET Type | |
| Halogen Free | |
| Package / Case | |
| Power Dissipation | |
| SVHC Present |
The NCE0117K is an N-Channel Trench MOSFET manufactured by NCE Power. This component is designed for various electronic applications requiring efficient power switching.
Key electrical specifications include a drain-source voltage (Vds) of 100V and a continuous drain current (Id) of 17A at 25°C (Tc). The gate threshold voltage (Vgs(th)) is typically 2.5V at 250uA, and the maximum drain-source on-resistance (Rds(on)) is 70mΩ at 5A and 10V. The maximum power dissipation (Pd) is rated at 55W.
This MOSFET is housed in a TO-252-2 (DPAK) package, suitable for surface-mount applications. The NCE0117K is classified under RoHS3 compliance, with an MSL rating of 1 and REACH unaffected status.
NCE Power provides this MOSFET with a focus on cost-effective solutions and timely global deliveries. Its specifications make it a suitable choice for power management circuits and switching applications.
100 V.
17 A.
70 mΩ at 5A drain current with 10V gate drive.
2.5 V at 250 µA.
55 W.
N-Channel.
TO-252-2 (DPAK).