| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,917 pcs
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2917 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request | |
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The NCE0110K is an N-channel MOSFET manufactured by NCE Power. This component is designed for various power switching applications, featuring a robust construction and reliable performance.
Key electrical specifications include a maximum drain-to-source voltage (Vds) of 100V and a continuous drain current (Id) of 9.6A at 25°C. The gate threshold voltage (Vgs(th)) is specified at 2.5V with a drain current of 250uA, and the on-resistance (Rds(on)) is 140 mΩ at 6A and 10V gate-source voltage. The maximum power dissipation is rated at 30W.
This MOSFET is housed in a TO-252-2 (DPAK) package, suitable for surface-mount applications. Its N-channel trench FET type ensures efficient switching characteristics. The component is RoHS3 compliant, MSL 1, and REACH unaffected, making it suitable for a wide range of electronic designs.
NCE Power provides this MOSFET with a focus on cost-effectiveness and timely global delivery. The NCE0110K is a reliable choice for engineers seeking a dependable power semiconductor for their projects.
The drain-to-source voltage (Vds) for the NCE0110K is 100V.
The continuous drain current (Id) for the NCE0110K is 9.6A at 25°C.
The gate threshold voltage (Vgs(th)) for the NCE0110K is 2.5V at 250uA.
The on-resistance (Rds(on)) for the NCE0110K is 140 mΩ at 6A and 10V.
The NCE0110K MOSFET is supplied in a TO-252-2 (DPAK) package.
The NCE0110K is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the NCE0110K is 1 Unlimited.