Mfr Part #:

NCE0110AK

Mfr Name: NCE

The NCE0110AK is an N-Channel Enhancement Mode Power MOSFET from NCE, featuring advanced trench technology for excellent RDS(ON) and low gate charge. It is designed for power switching applications.

✓ Total Stock: 14,886 pcs

NCE0110AK Available from 2 distributors

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Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Smaxon Electronics ✓ Non-Authorised Inventory information	12,289 pcs On Request	12289 pcs	On Request	1	On Request	On Request	21+	On Request	On Request
Xingangxin ✓ Non-Authorised Inventory information	2,597 pcs On Request	2597 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

NCE0110AK Specifications Quick View

Most important parameters for selection – full specs in datasheet.

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Category	New Products
Manufacturer Name	NCE
Input Capacitance	730pF
Mounting Type	Surface Mount
Reverse Recovery Time	21nS

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NCE0110AK Description

Short technical summary and product information.

The NCE0110AK is a high-performance N-Channel Enhancement Mode Power MOSFET manufactured by NCE. It utilizes advanced trench technology and design to achieve very low RDS(ON) values, with typical resistance of 95mΩ at VGS=10V and 10A, and 100mΩ at VGS=4.5V and 8A. This MOSFET offers a Drain-Source Voltage (VDS) of 100V and a continuous Drain Current (ID) of 10A.

Key electrical characteristics include a Gate Threshold Voltage (VGS(th)) ranging from 1.0V to 2.0V, and a typical forward transconductance (gFS) of 3.5S. Dynamic characteristics such as input capacitance (Ciss) are 730pF, output capacitance (Coss) are 37pF, and reverse transfer capacitance (Crss) are 27pF. Switching times are also optimized, with turn-on delay at 11nS and turn-off fall time at 9.1nS.

The NCE0110AK is packaged in a TO-252-2L surface mount package, offering excellent heat dissipation. Its robust design includes fully characterized avalanche voltage and current, good stability, and high ESD capability, making it suitable for demanding applications.

Applications include general power switching, hard-switched and high-frequency circuits, and uninterruptible power supplies. The device is Pb-Free and RoHS3 compliant.

NCE0110AK Quick Information

Product Type: N-Channel MOSFET

Canonical Name: NCE N-Channel Enhancement Mode Power MOSFET

Subcategory: N-Channel

NCE0110AK Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

NCE0110AK Features

100V Drain-Source Voltage rating.
10A Continuous Drain Current.
Low RDS(ON) for efficient power transfer.
Fast switching characteristics for high frequency.
TO-252-2L surface mount package.

NCE0110AK Applications

Used in dc-dc converter circuits.
Suitable for power management loads.
Ideal for motor control drivers.
Applicable in switching power supplies.
Used in load switching applications.

NCE0110AK FAQs

7 frequently asked questions generated from this part’s specifications.

What is the maximum drain-source voltage of the NCE0110AK?

The maximum drain-source voltage is 100V.

What is the continuous drain current rating?

The maximum continuous drain current is 10A.

What is the typical on-resistance of the NCE0110AK?

The typical drain-source on-state resistance is 95mOhm at VGS=10V and ID=10A.

What is the operating junction temperature range?

The operating junction temperature range is from -55 degrees Celsius to 175 degrees Celsius.

What package is the NCE0110AK available in?

The NCE0110AK is available in a TO-252-2L surface mount package.

What is the total gate charge of this MOSFET?

The typical total gate charge is 21.5nC at VDS=50V and ID=10A.

What is the pulsed drain current capability?

The maximum pulsed drain current is 40A.