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1,000 pcs
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1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The ON Semiconductor NCD57256DR2G is an isolated dual channel gate driver suitable for IGBT and MOSFET applications. It offers high peak output currents of up to ±6.5 A and ±3.5 A, with a 32V operating voltage.
This gate driver utilizes capacitive coupling technology and provides 2 channels. Key electrical specifications include a propagation delay of 80 ns and rise times of 12 ns and 10 ns. It boasts a high common mode transient immunity of 100 kV/µs, ensuring robust performance in noisy environments.
The NCD57256DR2G operates within a temperature range of -40°C to 125°C. It is supplied in a 16-SOIC package with surface mount mounting type. The device is RoHS3 compliant and halogen-free.
Typical applications include EV chargers, motor control, uninterruptible power supplies (UPS), industrial power supplies, solar inverters, and automotive applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.62 | $2.62 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The NCD57256DR2G offers peak output currents of ±6.5 A and ±3.5 A, depending on the package variant.
The operating voltage for the NCD57256DR2G is 32V.
The operating temperature range is -40°C to 125°C.
It is supplied in a 16-SOIC package with surface mount capability.
The minimum common mode transient immunity is 100 kV/µs.