| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,610 pcs
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1610 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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1,000 pcs
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1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The ON Semiconductor NCD57091CDWR2G is a high-current, single-channel IGBT/MOSFET gate driver featuring 5 kVrms internal galvanic isolation. Designed for high system efficiency and reliability in power applications, it accepts complementary inputs and provides options for active Miller clamp and separate high/low driver outputs. This device accommodates a wide range of input bias voltages and signal levels from 3.3 V to 20 V.
Key electrical specifications include a high peak output current of +6.5 A/−6.5 A, short propagation delays with accurate matching, and IGBT/MOSFET gate clamping during short circuits. It operates within a wide bias voltage range and supports 3.3 V, 5 V, and 15 V logic inputs. The NCD57091CDWR2G is available in a wide-body SOIC-8 package, suitable for surface mounting.
Typical applications for this gate driver include motor control, uninterruptible power supplies (UPS), automotive applications, industrial power supplies, and solar inverters. Its robust design ensures high transient and electromagnetic immunity, making it a reliable choice for demanding environments.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.62 | $2.62 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The NCD57091CDWR2G has a peak output current of +6.5 A and -6.5 A.
The NCD57091CDWR2G provides 5 kVrms of internal galvanic isolation.
The operating temperature range for the NCD57091CDWR2G is -40°C to 125°C.
The NCD57091CDWR2G is supplied in an 8-SOIC wide body package.
Yes, the NCD57091CDWR2G is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the NCD57091CDWR2G is 1 Unlimited.